Mask blanks substrate and method for manufacturing the same
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsTomoaki Sugiyama, Daijitsu Harada, Harunobu Matsui, Naoki Yarita, Masaki Takeuchi
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AssigneeShin-Etsu Chemical Co., Ltd.
InventorsTomoaki Sugiyama, Daijitsu Harada, Harunobu Matsui, Naoki Yarita, Masaki Takeuchi
Estimating the term…
A mask blanks substrate having a flatness of a calculation surface of 100 nm or less when a calculation region passing through central portions of first and second main surfaces and extending in a horizontal direction is set, a first region surface is cut out, a second region surface is cut out by setting a reference plane and a rotation axis and rotating the substrate by 180°, least square planes are calculated, the first and second region surfaces are converted into height maps to positions on the least square planes, the height map of the to second region surface is set as a reverse height map by symmetrically moving the height map, and a map of a calculated height obtained by adding heights of the height map of the first region surface and the reverse height map of the second region surface is set as the calculation surface.
A method for manufacturing a mask blank substrate having two main surfaces of a first main surface and a second main surface of 152 mm×152 mm square and having a thickness of 6.35 mm, the method comprising:
A method for manufacturing a mask blank substrate having two main surfaces of a first main surface and a second main surface of 152 mm×152 mm square and having a thickness of 6.35 mm, the method comprising:
Dependencies are inferred from the claim text.