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US 12,645,106 B2Granted
Singulation of lithium-containing photonic devices
AssigneeHyperLight Corporation
InventorsKevin Luke, Mian Zhang, Fan Ye, Roy Meade, Christian Reimer, Prashanta Kharel
Life of this patent
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Abstract
An optical device includes a substrate, an oxide layer on the substrate and an electro-optic device on the oxide layer. The oxide layer is at least one micrometer thick. The electro-optic device includes an electro-optic material having a thickness of not more than one micrometer. The silicon substrate, oxide layer, and the electro-optic material terminate at an edge. At least one of the silicon substrate has a thickness of at least five hundred micrometers or the edge includes a recessed region corresponding to a portion of the oxide layer.
Claims21
A photonic device, comprising:
- a substrate;
- an oxide layer of at least one micrometer on the substrate;
- an electro-optic device residing on the oxide layer and including an electro-optic material having a first thickness of not more than one micrometer, the substrate, the oxide layer, and the electro-optic material terminating at an edge, wherein the electro-optic device is singulated from an electro-optic device of another photonic device, wherein the photonic device is a neighbor of the other photonic device, wherein a street corresponding to a region is located between the edge of the photonic device and an edge of the other photonic device, wherein a plurality of trenches are located in the street before the singulating operation is performed, wherein the plurality of trenches are located at or near an edge of the street;
- wherein the substrate has a third thickness of at least five hundred micrometers;
- wherein the edge includes a recessed region corresponding to a portion of the oxide layer;
- and
- wherein the recessed region has a second thickness, the second thickness being less than the first thickness.
4 more elements
A photonic device, comprising:
- a substrate;
- an oxide layer on the substrate;
- an electro-optic device residing on the oxide layer and including an electro-optic material having a first thickness of not more than one micrometer, wherein the electro-optic device is singulated from an electro-optic device of another photonic device, wherein the photonic device is a neighbor of the other photonic device, wherein a street corresponding to a region is located between the edge of the photonic device and an edge of the other photonic device, wherein a plurality of trenches are located in the street before the singulating operation is performed, wherein the plurality of trenches are located at or near an edge of the street;
- and
- wherein the substrate, oxide layer, and electro-optic material terminate at an edge, the edge being at an angle of at least eighty degrees and not more than one hundred degrees from a top surface of the substrate;
- wherein the edge includes a recessed region corresponding to a portion of the oxide layer;
- and
- wherein the recessed region has a second thickness, the second thickness being less than the first thickness.
5 more elements
A method, comprising:
- determining a fourth thickness of a substrate of a photonic device including an electro-optic device on a substrate structure, the substrate structure including the substrate and an oxide layer on the substrate, the electro-optic device residing on the oxide layer and including an electro-optic material having a first thickness of not more than one micrometer;
- and
- singulating the electro-optic device from an electro-optic device of another photonic device to provide an edge for the electro-optic device based on the first thickness, the substrate, the oxide layer, and the electro-optic material terminating at the edge, wherein the photonic device is a neighbor of the other photonic device, wherein a street corresponding to a region is located between the edge of the photonic device and an edge of the other photonic device, wherein a plurality of trenches are located in the street before the singulating operation is performed, wherein the plurality of trenches are located at or near an edge of the street, the singulating further including stealth dicing the substrate structure;
- wherein the substrate has a third thickness of at least five hundred micrometers;
- wherein the edge includes a recessed region corresponding to a portion of the oxide layer;
- and
- wherein the recessed region has a second thickness, the second thickness being less than the first thickness.
4 more elements
Dependencies are inferred from the claim text.