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US 12,645,101 B2Granted
Tantalum nitride resistive heater for thermally-tunable photonics devices
AssigneeNewport Fab, LLC
InventorsZhirong Tang, Oleg Martynov, Edward Preisler
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Abstract
A semiconductor structure has a substrate and a thermally-tunable photonics device in or over the substrate. A tantalum nitride (TaN) resistive heater is over the substrate and proximate to the thermally-tunable photonics device. The TaN resistive heater is configured to tune the thermally-tunable photonics device.
Claims19
A semiconductor structure comprising:
- a substrate;
- at least one thermally-tunable photonics device in or over said substrate;
- a tantalum nitride (TaN) resistive heater over said substrate and proximate to said at least one thermally-tunable photonics device, said TaN resistive heater configured to tune said at least one thermally-tunable photonics device;
- wherein said TaN resistive heater is situated between two consecutive interconnect metal levels, or is situated over a first pre-metal dielectric (PMD) and under a second PMD.
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A semiconductor structure comprising:
- a semiconductor-on-insulator (SOI) substrate;
- at least one photonics device in or over said SOI substrate;
- a tantalum nitride (TaN) resistive heater over said SOI substrate, said TaN resistive heater configured to tune said at least one photonics device;
- wherein said TaN resistive heater is situated between two consecutive interconnect metal levels, or is situated over a first pre-metal dielectric (PMD) and under a second PMD.
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Dependencies are inferred from the claim text.