Waveguide integrated photodiode
AssigneeCisco Technology, Inc.
InventorsLong Chen, Gianlorenzo Masini
Life of this patent
Estimating the term…
Abstract
In part, in one aspect, the disclosure relates to a photodiode. The photodiode may include a substrate; a semiconductor layer comprising an semiconductor material, the semiconductor layer disposed on the substrate and in communication with at least a region of the substrate, the semiconductor layer having a first side, a second side, and an upper surface, the semiconductor layer having a height; a semiconductor structure partially disposed on the upper surface, the semiconductor structure comprising at least one elongate portion that extends beyond the first side and along a portion of the upper surface of the semiconductor layer; and a metal contact that is in electrical connection with the elongate portion of the semiconductor structure.
Claims27
A photodiode comprising:
- a substrate;
- a semiconductor layer comprising a semiconductor material, the semiconductor layer disposed on the substrate and in communication with at least a region of the substrate, the semiconductor layer having a first side, a second side, and an uppermost surface, the semiconductor layer having height Hi;
- a semiconductor structure partially disposed on the uppermost surface, the semiconductor structure comprising:
- at least one elongate portion that extends beyond the first side and along a portion of the uppermost surface of the semiconductor layer, wherein the first side is the furthest that the semiconductor layer and the semiconductor material extend in a first direction that is parallel with the uppermost surface;
- and
- a metal contact that is in electrical connection with the elongate portion of the semiconductor structure.
A photodiode comprising:
- a substrate;
- a semiconductor layer comprising a semiconductor material and disposed on the substrate, wherein a portion of the semiconductor layer is in communication with at least a region of the substrate, the semiconductor layer having a first side, a second side, and an uppermost surface;
- and
- a semiconductor structure partially disposed on the uppermost surface of the semiconductor layer, the semiconductor structure comprising:
- a first elongate portion that extends beyond the first side of the semiconductor layer and a second elongate portion that extends beyond the second side of the semiconductor layer, wherein the first side is the furthest that the semiconductor layer and the semiconductor material extend in a first direction, wherein the second side is the furthest that the semiconductor layer and the semiconductor material extend in a second direction opposite the first direction;
- and
- at least one metal contact that is in electrical connection with at least one of the first or second elongate portion of the semiconductor structure.
A method of manufacturing an integrated photodiode comprising:
- providing a silicon substrate with an oxide layer;
- growing a semiconductor layer comprising a semiconductor material on an exposed portion of the silicon substrate, the semiconductor layer comprising a first side, an uppermost surface, and a second side;
- forming a semiconductor structure on the uppermost surface of the semiconductor layer wherein the semiconductor structure has at least one elongate portion that extends beyond the first side of the semiconductor layer, wherein the first side is the furthest that the semiconductor layer and the semiconductor material extend in a first direction that is parallel with the uppermost surface;
- and
- bonding a metal contact onto the elongate portion of the semiconductor structure.
Dependencies are inferred from the claim text.