Three terminal broad area laser

A semiconductor laser comprising:

• a gain medium comprising a III-V semiconductor material, wherein the gain medium has an output edge through which photons generated in the gain medium can be emitted;
• a common electrode electrically coupled to a first portion of the gain medium and to a second portion of the gain medium, wherein one of (i) the second portion of the gain medium is between the first portion of the gain medium and the output edge or (ii) the first portion of the gain medium is between the second portion of the gain medium and the output edge;
• a pump electrode electrically coupled to the first portion of the gain medium, wherein the pump electrode is configured to apply a first current through the first portion of the gain medium, wherein the first current provides energy for an emitted laser pulse;
• a switch electrode electrically coupled to the second portion of the gain medium, wherein the switch electrode is configured to apply a second current through the second portion of the gain medium, wherein the second current controls a transparency of the second portion of the gain medium such that the second current determines when the device begins emitting any laser light so as to control a duration of the emitted laser pulse;
• and
• a circuit electrically coupled to the common electrode, the pump electrode, and the switch electrode, wherein the circuit is configured to:
• apply the first current through the pump electrode, wherein applying the first current comprises controlling an amplitude of the first current such that the temperature of the gain medium is maintained at a specified temperature or within a specified range of temperatures;
• and
• while applying the first current through the pump electrode, apply the second current through the switch electrode.