Methods for atomic layer deposition of SiCO(N) using halogenated silyl amides
AssigneeApplied Materials, Inc.
InventorsBhaskar Jyoti Bhuyan, Mark Saly
Life of this patent
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Abstract
Methods for the formation of films comprising Si, C, O and N are provided. Certain methods involve sequential exposures of a hydroxide terminated substrate surface to a silicon precursor and an alcohol-amine to form a film with hydroxide terminations. Certain methods involved sequential exposures of hydroxide terminated substrate surface to a silicon precursor and a diamine to form a film with an amine terminated surface, followed by sequential exposures to a silicon precursor and a diol to form a film with a hydroxide terminated surface.
Claims17
A method of depositing a film comprising Si, C, O and N, the method comprising:
- exposing a substrate surface comprising-OH terminations to a first process cycle comprising sequential exposure to a first silicon precursor and a diamine compound to form a film with amine terminations;
- and
- exposing the film with amine terminations to a second process cycle comprising sequential exposure to a second silicon precursor and a diol form a film comprising-OH terminations, wherein the first silicon precursor and the second silicon precursor independently comprise a halogenated cyclotrisilazane-based precursor having a structure represented by
- wherein each R is independently is H or (CH2)nCHyNAy, each R1, and R2 are independently H, Br, Cl, I or (CH2)nCHyNAy, n=0-6, y=0-1, A=C1-6 linear, branched or cyclic alkyl or aryl group or hydrogen, with the proviso that at least one R1 or R2 is Br, Cl or I and at least one of R, R1 or R2 is (CH2)nCHyNAy.
A method of depositing a film comprising Si, C, O and N, the method comprising:
- exposing a substrate surface comprising-OH terminations to a first silicon precursor and a diamine compound to form a film with amine terminations;
- and
- exposing the film with amine terminations to a second silicon precursor and a diol to form a film comprising-OH terminations, wherein the first silicon precursor and the second silicon precursor independently comprise a halogenated cyclotrisilazane-based precursor having a structure represented by
- wherein each R is independently is H or (CH2)nCHyNAy, each R1, and R2 are independently H, Br, Cl, I or (CH2)nCHyNAy, n=0-6, y=0-1, A=C1-6 linear, branched or cyclic alkyl or aryl group or hydrogen, with the proviso that at least one R1 or R2 is Br, Cl or I and at least one of R, R1 or R2 is (CH2)nCHyNAy.
A method of depositing a film comprising Si, C, O and N, the method comprising:
- exposing a substrate surface to a silicon precursor to form a film with silicon-halogen terminations;
- exposing the film with silicon-halogen terminations to an alcohol-amine to form a film comprising-OH terminations;
- exposing the film comprising-OH terminations to a first process cycle comprising sequential exposure to the silicon precursor and a diamine compound to form a film with amine terminations;
- and
- exposing the film with amine terminations to a second process cycle comprising sequential exposure to the silicon precursor and a diol to form a film comprising-OH terminations, wherein the silicon precursor comprises a halogenated cyclotrisilazane-based precursor having a structure represented by
- wherein each R is independently is H or (CH2)nCHyNAy, each R1, and R2 are independently H, Br, Cl, I or (CH2)nCHyNAy, n=0-6, y=0-1, A=C1-6 linear, branched or cyclic alkyl or aryl group or hydrogen, with the proviso that at least one R1 or R2 is Br, Cl or I and at least one of R, R1 or R2 is (CH2)nCHyNAy.
Dependencies are inferred from the claim text.