Diffusion bonded tungsten containing target to titanium or titanium alloy backing plate
AssigneeSolstice Advanced Materials US, Inc.
InventorsXiaodan Wu, Susan D. Strothers, Rashmi Mohanty, Wayne Meyer
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Abstract
A sputtering target assembly comprises a tungsten containing sputtering target, a titanium containing backing plate attached to the tungsten containing sputtering target and an interlayer positioned between and diffusion bonding the tungsten containing sputtering target and the titanium containing backing plate. The interlayer includes a nickel layer immediately adjacent to the tungsten containing sputtering target and a copper layer immediately adjacent to the nickel layer.
Claims18
A sputtering target assembly comprising:
- a tungsten containing sputtering target, wherein the tungsten containing sputtering target comprises 0 wt. % to about 50 wt. % of an alloying component and the balance is tungsten, wherein the alloying component is selected from the group consisting of titanium, aluminum and molybdenum;
- a titanium containing backing plate attached to the tungsten containing sputtering target;
- and
- an interlayer positioned between and diffusion bonding the tungsten containing sputtering target and titanium containing backing plate, the interlayer comprising:
- a nickel layer immediately adjacent to the tungsten containing sputtering target;
- and
- a copper layer immediately adjacent to the nickel layer, wherein the nickel layer is from 1 micron to 10 microns thick, wherein the copper layer is oxygen-free copper and is about 0.254 mm to 7.62 mm thick, and wherein the sputtering target assembly has a bond strength of at least 10 ksi (68.9 MPa).
A method for forming a sputtering target assembly, the method comprising:
- forming a nickel layer on a back surface of a tungsten containing target, the tungsten containing target comprising 0 wt. % to about 50 wt. % of an alloying component and the balance tungsten, the alloying component is selected from the group consisting of titanium, aluminum, and molybdenum;
- forming a copper layer on the nickel layer from oxygen-free copper and hot pressing to bond, the copper layer immediately adjacent to the nickel layer, the copper layer having a thickness of about 0.254 mm to 7.62 mm;
- and
- diffusion bonding the tungsten containing sputtering target to a titanium containing backing plate, wherein the nickel layer is from 1 micron to 10 microns thick and wherein the sputtering target assembly has a bond strength of at least 10 ksi (68.9 MPa).
Dependencies are inferred from the claim text.