Dopant complex and an electronic component

An electronic component comprising a transparent layer comprising transparent conductor material in direct contact with a dopant layer, wherein the dopant layer is formed of a dopant complex formed of a dopant ion component encapsulated in a polymer matrix, wherein the dopant ion component is a metal triflate being copper triflate, cerium triflate, aluminium triflate, holmium triflate, terbium triflate, nickel triflate, or hafnium triflate, a metal antimonate being sodium hexafluoroantimonate, or any combination thereof, and the polymer matrix comprises or consists of a hydroxyl-containing polymer, wherein the dopant complex is formed of the dopant ion component coupled with the polymer matrix, and wherein the hydroxyl-containing polymer of the polymer matrix is bound to a metal part of the dopant ion component.

A method of improving the aging resistance of an electronic component comprising a transparent layer comprising transparent conductor material in direct contact with a dopant layer formed of a dopant complex including a dopant ion component encapsulated in a polymer matrix, comprising:

• covering the transparent layer comprising transparent conductor material by with the dopant layer formed of the dopant complex, wherein the dopant ion component is a metal triflate being copper triflate, cerium triflate, aluminium triflate, holmium triflate, terbium triflate, nickel triflate, or hafnium triflate, a metal antimonate being sodium hexafluoroantimonate, or any combination of thereof, and the polymer matrix comprises or consists of a hydroxyl-containing polymer, wherein the dopant complex is formed of the dopant ion component coupled with the polymer matrix, and the hydroxyl-containing polymer of the polymer matrix is reacted with a metal part of the dopant ion component.