Polishing pad, method for manufacturing the same, and method for manufacturing semiconductor device using the same

A polishing pad comprising:

• a polishing layer,
• wherein the polishing layer includes zinc (Zn), and
• a concentration of the zinc (Zn) is 0.5 ppm to 40 ppm parts by weight based on a total weight of the polishing layer,
• wherein the polishing layer has a total oxidizing power index of 1.5 to 10 represented by the following Equation 3:
• Total oxidizing power index=(Con.Al×Oxi.Al)+(Con.Zn×Oxi.Zn)+(Con.Al×Oxi.Al) [Equation 3]
• wherein Con.Al is a concentration value in ppm of the weight of aluminum based on the total weight of the polishing layer, Con.Zn is the concentration of zinc (Zn), Con.Fe is a concentration value in ppm of the weight of iron (Fe) based on the total weight of the polishing layer,
• the Oxi.Al is an ionization index of the aluminum (Al), and is a value obtained by dividing the reciprocal of the primary ionization energy of the aluminum (Al) by the sum of the reciprocal of the primary ionization energy of the aluminum (Al), the reciprocal of the primary ionization energy of the zinc (Zn), and the reciprocal of the primary ionization energy of the iron (Fe),
• the Oxi.zn is an ionization index of the zinc (Zn), and is a value obtained by dividing the reciprocal of the primary ionization energy of the zinc (Zn) by the sum of the reciprocal of the primary ionization energy of aluminum (Al), the reciprocal of the primary ionization energy of the zinc (Zn), and the reciprocal of the primary ionization energy of the iron (Fe), and
• the Oxi.Fe is an ionization index of the iron (Fe), and is a value obtained by dividing the reciprocal of the primary ionization energy of the iron (Fe) by the sum of the reciprocal of the primary ionization energy of the aluminum (Al), the reciprocal of the primary ionization energy of the zinc (Zn), and the reciprocal of the primary ionization energy of the iron (Fe).