Methods and devices for improving bond strength of diffusion barriers
AssigneeTokyo Electron Limited
InventorsAdam Gildea, Satohiko Hoshino
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Abstract
Semiconductor devices and corresponding methods of manufacture are disclosed. The methods include forming a first layer on a first substrate, treating the first layer with a nitrogen-based plasma to form a first type of dangling bonds, treating the first layer with an oxygen-based plasma to transform the first type of dangling bonds into a second type of dangling bonds, and treating the first layer with water to transform the second type of dangling bonds into a third type of dangling bonds.
Claims20
A method for fabricating a semiconductor device, comprising:
- forming a first layer on a first substrate;
- treating the first layer with a nitrogen-based plasma to form a first type of dangling bonds;
- treating the first layer with an oxygen-based plasma to transform the first type of dangling bonds into a second type of dangling bonds;
- and
- treating the first layer with water to transform the second type of dangling bonds into a third type of dangling bonds.
A method for fabricating a semiconductor device, comprising:
- forming a first layer on a first substrate;
- forming a second layer on a second substrate;
- forming a first type of dangling bonds on the first layer of the first substrate and on the second layer of the second substrate;
- transforming the first type of dangling bonds on the first layer of the first substrate and on the second layer of the second substrate into a second type of dangling bonds;
- transforming the second type of dangling bonds on the first layer of the first substrate and on the second layer of the second substrate into a third type of dangling bonds;
- and
- bonding the third type of dangling bonds on the first layer of the first substrate with the third type of dangling bonds on the second layer of the second substrate.
A method for fabricating a semiconductor device, comprising:
- forming a dielectric material on a first portion of a first substrate;
- forming the dielectric material on a first portion of a second substrate;
- forming a conductive material on a second portion of the first substrate;
- forming the conductive material on a second portion of the second substrate;
- forming dangling bonds on the first portion of the first substrate;
- forming dangling bonds on the first portion of the second substrate;
- and
- bonding the first substrate and the second substrate such that at least one of the dangling bonds on the first portion of the first substrate bonds with at least one of the dangling bonds on the first portion of the second substrate to form an oxide.
Dependencies are inferred from the claim text.