Semiconductor device and semiconductor module
AssigneeFuji Electric Co., Ltd.
InventorMasahide Gotoh
Life of this patent
Estimating the term…
Abstract
A semiconductor device, including: a front-surface-side metal layer provided above a semiconductor substrate; a plated layer provided on an upper surface of the front-surface-side metal layer; a barrier layer which is provided on the upper surface of the front-surface-side metal layer, and provided being in direct contact with the plated layer on the upper surface of the front-surface-side metal layer; and an insulation protecting layer provided on the barrier layer, is provided. A semiconductor module, including: the semiconductor device; a lead frame provided above a front-surface-side metal layer; and an adhesive layer for connecting the front-surface-side metal layer to the lead frame, is provided.
Claims20
A semiconductor device, comprising:
- a front-surface-side metal layer provided above a semiconductor substrate;
- a plated layer provided on an upper surface of the front-surface-side metal layer;
- a barrier layer which is provided on the upper surface of the front-surface-side metal layer, and provided being in direct contact with the plated layer on the upper surface of the front-surface-side metal layer;
- and
- an insulation protecting layer provided on the barrier layer,
- wherein the barrier layer is formed of Titanium nitride (TiN), and
- an end of the plated layer which is horizontally adjacent to the barrier layer and vertically in contact with the front-surface-side metal layer is provided apart from and not overlapped by the insulation protecting layer.
A semiconductor device, comprising:
- a front-surface-side metal layer provided above a semiconductor substrate;
- a plated layer provided on an upper surface of the front-surface-side metal layer;
- a barrier layer which is provided on the upper surface of the front-surface-side metal layer, and provided being in direct contact with the plated layer on the upper surface of the front-surface-side metal layer;
- and
- an insulation protecting layer provided on the barrier layer,
- wherein the barrier layer is formed of Titanium nitride (TIN), and
- an end of the plated layer which is horizontally adjacent to the barrier layer and vertically in contact with the front-surface-side metal layer is provided in direct contact with a part of a horizontal upper surface of the barrier layer.
Dependencies are inferred from the claim text.