Semiconductor device and method of forming high crystal quality magnetic layer for shielding of low frequency magnetic fields

A method of making a semiconductor device, comprising:

• providing a substrate;
• forming a magnetic film material over the substrate;
• laser spike annealing the magnetic film material in a magnetic field;
• and
• forming a shielding layer over the magnetic film material.

A semiconductor device, comprising:

• a substrate;
• an electrical component disposed over the substrate;
• an encapsulant deposited over the electrical component and substrate;
• a magnetic film material formed over the encapsulant, wherein the magnetic film material is laser spike annealed in a magnetic field;
• and
• a shielding layer formed over the magnetic film material.

A semiconductor device, comprising:

• a substrate;
• an electrical component disposed over the substrate;
• an encapsulant deposited over the electrical component and substrate;
• a magnetic film material formed over the encapsulant, wherein the magnetic film material is laser spike annealed in a magnetic field;
• a first magnet disposed on a first side of the semiconductor device;
• and
• a second magnet disposed on a second side of the semiconductor device opposite the first side of the semiconductor device, wherein the first magnet has a first pole and the second magnet has a second pole opposite the first pole.

A semiconductor device, comprising:

• a substrate;
• a magnetic film material formed over the substrate, wherein the magnetic film material is laser spike annealed in a magnetic field;
• and
• a shielding layer formed over the magnetic film material.

A semiconductor device, comprising:

• a substrate;
• a magnetic film material formed over the substrate, wherein the magnetic film material is laser spike annealed in a magnetic field;
• a first magnet disposed on a first side of the semiconductor device;
• and
• a second magnet disposed on a second side of the semiconductor device opposite the first side of the semiconductor device, wherein the first magnet has a first pole and the second magnet has a second pole opposite the first pole.