Method of producing an etching mask, method of etching a structure into a substrate, use of a tetrel layer and structure for producing a mask

A method-of producing an etching mask, the method-comprising:

• providing a substrate;
• applying a metal layer with a metal layer thickness to the substrate, wherein the metal layer comprises at least one transition metal and/or aluminum or is formed from such a metal;
• applying at least one masking layer with a masking layer thickness to the substrate coated with the metal layer;
• structuring the masking layer, wherein the metal layer is exposed in at least one processing region;
• subsequent of structuring the masking layer, coating of the substrate with a tetrel layer with a tetrel layer thickness, with the tetrel layer including at least partially a tetrel, wherein an interdiffusion zone is formed at the processing region at an interface between the metal layer and the tetrel layer, wherein the tetrel layer-comprises silicon or is formed from silicon and wherein the interdiffusion zone is present as a transition metal silicide layer or an aluminum silicide layer;
• removing the masking layer;
• and
• selectively etching the metal layer, wherein the substrate is exposed in at least one etching region other than the processing region, and the metal layer is at least partially maintained in the processing region.