Method for treating substrate using boron compound
AssigneeTes Co., Ltd
InventorsHyeong-Wook Moon, Bong-Soo Kwon, Se-Woong Bae, Eun-Jin Song
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Abstract
A substrate treating method for removing a dielectric by-product produced by etching a dielectric film formed on a substrate, includes: providing a gaseous boron compound into a reaction chamber to remove the dielectric by-product; and purging an inside of the reaction chamber. The boron compound is represented by BnX3n, where X is hydrogen, alkyl, amino, or halogen, and n is a natural number greater than or equal to 1.
Claims16
A substrate treating method for removing a dielectric by-product produced by etching a dielectric film formed on a substrate, the method comprising:
- providing a gaseous boron compound into a reaction chamber to remove the dielectric by-product;
- and
- purging an inside of the reaction chamber, wherein the gaseous boron compound comprises B2H6.
A substrate treating method for removing a dielectric by-product produced by etching a dielectric film formed on a substrate, the method comprising:
- applying RF power to a reaction chamber;
- providing a gaseous boron compound into the reaction chamber and converting the gaseous boron compound into plasma to remove the dielectric by-product;
- and
- purging an inside of the reaction chamber,
- wherein the gaseous boron compound comprises B2H6.
Dependencies are inferred from the claim text.