Manufacturing method of semiconductor device

A manufacturing method of a semiconductor device, comprising:

• preparing a wafer having a first surface,
• a plurality of semiconductor devices being formed directly on and contacting the first surface, and
• a support plate being attached to the first surface through an adhesive that contacts the first surface;
• grinding a second surface of the wafer opposite to the first surface in a state where the support plate is attached to the first surface of the wafer;
• after the grinding the second surface, forming a vertical crack inside the wafer and along a boundary between adjacent semiconductor elements by pressing a scribe wheel directly against the second surface of the wafer along the boundary;
• separating the support plate from the wafer while leaving the adhesive on the first surface of the wafer;
• cleaving the wafer along the boundary by pressing a breaking bar directly against the first surface of the wafer through the adhesive and along the boundary, thereby dividing the wafer and dividing the plurality of semiconductor devices;
• and
• removing the adhesive from at least one of the plurality of semiconductor devices that has been divided from the wafer by the cleaving the wafer, thereby manufacturing the semiconductor device.