Electronic devices comprising silicon carbide materials
AssigneeMicron Technology, Inc.
InventorsSantanu Sarkar, Farrell M. Good
Life of this patent
Estimating the term…
Abstract
An electronic device comprising a stack structure comprising one or more stacks of materials and one or more silicon carbide materials adjacent to the one or more stacks of materials. The materials of the one or more stacks comprise a single chalcogenide material and one or more of a conductive carbon material, a conductive material, and a hardmask material. The one or more silicon carbide materials comprises silicon carbide, silicon carboxide, silicon carbonitride, silicon carboxynitride, and also comprise silicon-carbon covalent bonds. The one or more silicon carbide materials is configured as a liner or as a seal. Additional electronic devices are disclosed, as are related systems and methods of forming an electronic device.
Claims20
An electronic device comprising:
- memory cells, the memory cells comprising:
- stacks of materials comprising a single chalcogenide material and one or more additional materials;
- and
- at least one silicon carbide material vertically adjacent to the stacks of materials and on sidewalls of the single chalcogenide material, a thickness of the at least one silicon carbide material substantially uniform over an entire length thereof.
An electronic device comprising:
- an array of memory cells, one or more of the memory cells comprising:
- stacks of materials comprising a single chalcogenide material and one or more of a conductive carbon material and a conductive metal material;
- and
- at least one silicon carbide material on sidewalls of the stacks of materials and on sidewalls of the single chalcogenide material, the at least one silicon carbide material comprising silicon-carbon covalent bonds and a substantially uniform thickness over an entire length thereof.
An electronic device comprising:
- memory cells, one or more of the memory cells comprising:
- a stack structure comprising one or more stacks of materials, the materials of the one or more stacks comprising at least one chalcogenide material and one or more conductive materials;
- one or more silicon carbide materials adjacent to at least a portion of the one or more stacks of materials comprising a substantially uniform thickness over an entire length thereof and comprising silicon carboxide, silicon carbonitride, silicon carboxynitride, or silicon boronitrocarbide;
- and
- a dielectric material between laterally adjacent stacks of materials.
Dependencies are inferred from the claim text.