Quantum dot film layers, quantum dot light emitting devices and manufacturing methods therefor
AssigneesBeijing BOE Technology Development Co., Ltd., Boe Technology Group Co., Ltd.
InventorsJingwen Feng, Zhuo Li
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Abstract
The present application provides a quantum dot film layer, a quantum dot light emitting device and a manufacturing method therefor to improve the balance of carriers. The quantum dot film layer includes a first quantum dot layer and a second quantum dot layer. The first quantum dot layer includes first quantum dots, and first photosensitive ligands connected with surfaces of the first quantum dots. The second quantum dot layer includes second quantum dots, and second non-photosensitive ligands connected with surfaces of the second quantum dots. The second quantum dots are the same as the first quantum dots.
Claims18
A quantum dot film layer, comprising:
- a first quantum dot layer and a second quantum dot layer which are laminated,
- wherein the first quantum dot layer comprises first quantum dots, first photosensitive ligands connected with surfaces of the first quantum dots, and first alkyl chain ligands connected with the surfaces of the first quantum dots;
- and
- the second quantum dot layer comprises second quantum dots, second non-photosensitive ligands connected with surfaces of the second quantum dots, and second alkyl chain ligands connected with the surfaces of the second quantum dots, wherein the second quantum dots are the same as the first quantum dots.
A quantum dot light emitting device, comprising:
- a hole transport layer, an electron transport layer, and a quantum dot film layer located between the hole transport layer and the electron transport layer, and the quantum dot film layer comprises a first quantum dot layer and a second quantum dot layer which are laminated,
- wherein the first quantum dot layer comprises first quantum dots, first photosensitive ligands connected with surfaces of the first quantum dots, and first alkyl chain ligands connected with the surfaces of the first quantum dots;
- and
- the second quantum dot layer comprises second quantum dots, second non-photosensitive ligands connected with surfaces of the second quantum dots, and second alkyl chain ligands connected with the surfaces of the second quantum dots, wherein the second quantum dots are the same as the first quantum dots.
A manufacturing method of a quantum dot light emitting device, comprising:
- forming a quantum dot film layer on a substrate, and the quantum dot film layer comprises a first quantum dot layer and a second quantum dot layer which are laminated,
- wherein the first quantum dot layer comprises first quantum dots, first photosensitive ligands connected with surfaces of the first quantum dots, and first alkyl chain ligands connected with the surfaces of the first quantum dots;
- and
- the second quantum dot layer comprises second quantum dots, second non-photosensitive ligands connected with surfaces of the second quantum dots, and second alkyl chain ligands connected with the surfaces of the second quantum dots, wherein the second quantum dots are the same as the first quantum dots.
Dependencies are inferred from the claim text.