US 12,641,958 B2 · Organic light emitting display device with hybrid type thin film transistors

Abstract

An organic light emitting display device including a substrate, a light emitting element on the substrate, and a driving thin film transistor supplying drive current to the light emitting element is disclosed. The driving thin film transistor includes a buffer layer on the substrate, a first polycrystalline silicon semiconductor layer on the buffer layer, a first oxide semiconductor layer contacting the first polycrystalline silicon semiconductor layer while being disposed thereon and including a first channel region, a first source region, and a first drain region, a gate insulating layer covering the first oxide semiconductor layer and the first polycrystalline silicon semiconductor layer, a first gate electrode disposed on the gate insulating layer, a first source electrode connected to the first source region, a first drain electrode connected to the first drain region, and a first light shielding layer disposed under the first oxide semiconductor layer while overlapping therewith.

Claims29

Dependent claims

An organic light emitting display device comprising:

a substrate;
a light emitting element on the substrate;
and
a driving thin film transistor configured to supply drive current to the light emitting element,
wherein the driving thin film transistor comprises:
a first polycrystalline silicon semiconductor layer on the substrate, the first polycrystalline silicon semiconductor layer doped with group-III impurity ions;
a first oxide semiconductor layer on the first polycrystalline silicon semiconductor layer, the first oxide semiconductor layer contacting the first polycrystalline silicon semiconductor layer and comprising a first channel region, a first source region, and a first drain region;
a gate insulating layer on the first oxide semiconductor layer and the first polycrystalline silicon semiconductor layer;
a first gate electrode on the gate insulating layer;
a first source electrode connected to the first source region;
and
a first drain electrode connected to the first drain region,
wherein the first polycrystalline silicon semiconductor layer is a p-type semiconductor layer, and the first oxide semiconductor layer is an n-type semiconductor layer.

10 more elements

An organic light emitting display device comprising:

a substrate;
a first light shielding layer on the substrate;
a first polycrystalline silicon semiconductor layer on the first light shielding layer, the first polycrystalline silicon semiconductor layer overlapping with the first light shielding layer, the first polycrystalline silicon semiconductor layer doped with group-III impurity ions;
a first oxide semiconductor layer on the first polycrystalline silicon semiconductor layer, the first oxide semiconductor layer contacting the first polycrystalline silicon semiconductor layer;
a first gate electrode on the first oxide semiconductor layer;
a source electrode connected to one side of the first oxide semiconductor layer;
and
a drain electrode connected to another side of the first oxide semiconductor layer,
wherein the first polycrystalline silicon semiconductor layer is a p-type semiconductor layer, and the first oxide semiconductor layer is an n-type semiconductor layer.

6 more elements

Dependencies are inferred from the claim text.

Organic light emitting display device with hybrid type thin film transistors

Life of this patent

Organic light emitting display device with hybrid type thin film transistors

Life of this patent

Abstract

Claims29