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US 12,641,929 B2Granted
Light absorbing barrier for LED fabrication processes
AssigneeApplied Materials, Inc.
InventorsFabio Pieralisi, Mingwei Zhu, Zihao Yang, Liang Zhao, Jeffrey L. Franklin, Hou T. Ng, Nag Patibandla
Life of this patent
Estimating the term…
Abstract
Exemplary semiconductor structures may include a plurality of LED structures and a backplane layer. Exemplary semiconductor structures may also include a light barrier region positioned between the LED structures and the backplane layer. The light barrier region may be operable to absorb light at wavelengths shorter than or about 300 nm and transmit light at wavelengths greater than or about 350.
Claims20
A semiconductor structure comprising:
- a group of LED structures on a substrate layer forming a patterned LED substrate, wherein each LED structure of the group of LED structures includes contact pads, wherein the group of LED structures includes a first LED structure and a second LED structure, wherein the first LED structure includes a first n-contact pad of the contact pads and a first p-contact pad of the contact pads, wherein the second LED structure includes a second n-contact pad of the contact pads and a second p-contact pad of the contact pads, wherein the second n-contact pad interposes the first p-contact pad and the second p-contact pad;
- a light absorption barrier on the patterned LED substrate, wherein the light absorption barrier leaves exposed a portion of the contact pads, and the light absorption barrier is operable to absorb greater than 50% of light at wavelengths shorter than 300 nm;
- and
- a reflective layer on the light absorption barrier, wherein the light absorption barrier is between the LED structures and the reflective layer, the reflective layer is operable to reflect light emitted from the LED structures that passes through the light absorption barrier, and the reflective layer exposes the portion of the contact pads, and wherein the contact pads extend through the light absorption barrier and the reflective layer.
1 more element
A semiconductor structure comprising:
- a group of LED structures on a substrate layer forming a patterned LED substrate, wherein each LED structure of the group of LED structures includes contact pads, wherein the group of LED structures includes a first LED structure and a second LED structure, wherein the first LED structure includes a first n-contact pad of the contact pads and a first p-contact pad of the contact pads, wherein the second LED structure includes a second n-contact pad of the contact pads and a second p-contact pad of the contact pads, wherein the second n-contact pad interposes the first p-contact pad and the second p-contact pad;
- a first portion of a light absorption barrier on the patterned LED substrate and the substrate layer, wherein the first portion of the light absorption barrier leaves exposed a portion of the contact pads, and the first portion of the light absorption barrier is operable to absorb greater than 50% of light at wavelengths shorter than 300 nm;
- and
- a reflective layer on the first portion of the light absorption barrier, wherein the first portion of the light absorption barrier is between the LED structures and the reflective layer, wherein the reflective layer is characterized by reflecting light emitted from the LED structures that passes through the first portion of the light absorption barrier, and the reflective layer exposes the portion of the contact pads, and wherein the contact pads extend through the light absorption barrier and the reflective laver.
1 more element
A semiconductor structure comprising:
- a plurality of LED structures, wherein each LED structure of the plurality of LED structures includes contact pads, wherein the plurality of LED structures includes a first LED structure and a second LED structure, wherein the first LED structure includes a first n-contact pad of the contact pads and a first p-contact pad of the contact pads, wherein the second LED structure includes a second n-contact pad of the contact pads and a second p-contact pad of the contact pads, wherein the second n-contact pad interposes the first p-contact pad and the second p-contact pad;
- a backplane layer;
- and
- a light barrier region positioned between the plurality of LED structures and the backplane layer, wherein the light barrier region leaves exposed a portion of the contact pads, and the light barrier region is operable to absorb greater than 50% of light at wavelengths shorter than 300 nm;
- and
- a reflective layer on the light barrier region, wherein the light barrier region is between the LED structures and the reflective laver, the reflective layer is operable to reflect light emitted from the LED structures that passes through the light barrier region, and the reflective layer exposes the portion of the contact pads, and wherein the contact pads extend through the light barrier region and the reflective laver.
3 more elements
Dependencies are inferred from the claim text.