Doped mixed cation perovskite materials and devices exploiting same

A method of forming an optoelectronic device comprising:

• depositing one or more first layers of the optoelectronic device to form a lower portion of the optoelectronic device;
• depositing a doped perovskite film to form an active layer of the optoelectronic device;
• and
• depositing one or more second layers of the optoelectronic device to form an upper portion of the optoelectronic device;
• wherein
• the doped perovskite film is formed from a doped triple cation perovskite solution established by doping a triple cation perovskite solution;
• and
• the doped perovskite film has the composition FAXMAYCSZPbMIVSCNQBrN;
• wherein
• FA stands for formamidinium;
• MA stands for methylammonium;
• SCN stands for thiocyanate;
• grains of the doped perovskite film are devoid of a coating or shell of a material prior to the deposition of the one or more second layers forming the upper portion of the optoelectronic device where the coating or shell of the material protects the grains of the doped perovskite film from defect generation and passivates the grains of the doped perovskite film;
• the doped perovskite film has a first composition or a second composition;
• within the first composition:
• X lies within the range 0.5 to 1.0;
• Y lies within the range 0 to 0.6;
• Z lies within the range 0.05 to 0.30;
• M lies within the range 0.5 to 1.5;
• V lies within the range 2.0 to 3.0;
• Q lies within the range 0 to 1.0;
• and
• N lies within the range 0 to 1.0;
• and
• within the second composition:
• X lies within the range 0.8 to 0.9;
• Y lies within the range 0.5 to 0.60;
• Z lies within the range 0.10 to 0.20;
• M lies within the range 0.9 to 1.1;
• V lies within the range 2.25 to 2.75;
• Q lies within the range 0.2 to 0.3;
• and
• N lies within the range 0.2 to 0.3.

A method of forming an optoelectronic device comprising forming a doped perovskite film directly between a lower electrode structure and an upper electrode structure;

• wherein
• the doped perovskite film has the composition FAXMAYCsZPbMIVSCNQBrN;
• X, Y, Z, M, V, Q, N may each range between 0.0001 to 3;
• X and Y may be independently set of each other and independent of Z, M, V, Q and N;
• and
• grains of the doped perovskite film are devoid of a coating or shell of a material prior to the deposition of the one or more second layers forming the upper portion of the optoelectronic device where the coating or shell of the material protects the grains of the doped perovskite film from defect generation and passivates the grains of the doped perovskite film;
• wherein
• FA denotes formamidinium;
• MA denotes methylammonium;
• SCN denotes thiocyanate;
• X lies within the range 0.8 to 0.9;
• Y lies within the range 0.5 to 0.60;
• Z lies within the range 0.10 to 0.20;
• M lies within the range 0.9 to 1.1;
• V lies within the range 2.25 to 2.75;
• Q lies within the range 0.2 to 0.3;
• and
• N lies within the range 0.2 to 0.3.

A method of forming an optoelectronic device comprising:

• depositing one or more first layers of the optoelectronic device to form a lower portion of the optoelectronic device;
• forming a doped perovskite film as an active layer of the optoelectronic device;
• depositing one or more second layers of the optoelectronic device to form an upper portion of the optoelectronic device;
• and
• depositing the one or more first layers of the optoelectronic device to form the lower portion of the optoelectronic device comprises;
• depositing a lower electrode;
• and
• depositing a lower charge extracting structure upon which the doped perovskite film is formed comprising another material deposited upon the lower electrode to provide an electron transport layer between the lower electrode and a semiconductor material deposited upon the material;
• wherein
• the material is one of titanium dioxide, tin oxide and [6, 6]-phenyl-C61-butyric acid methyl ester;
• the semiconductor material is lithium doped mesoporous titanium dioxide;
• the doped perovskite film is formed from a doped triple cation perovskite solution established by doping a triple cation perovskite solution;
• the doped perovskite film has the composition FAXMAYCSZPbMSCNQBrN where X, Y, Z, M, V, Q, N may each range between 0.0001 to 3;
• FA stands for formamidinium;
• MA stands for methylammonium;
• SCN stands for thiocyanate;
• and
• grains of the doped perovskite film are devoid of a coating or shell of a material prior to the deposition of the one or more second layers forming the upper portion of the optoelectronic device where the coating or shell of the material protects the grains of the doped perovskite film from defect generation and passivates the grains of the doped perovskite film.