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US 12,641,915 B2Granted
Semiconductor device having a cavity under lens portion
AssigneeCompoundtek Pte. Ltd.
InventorGunasagar S.
Life of this patent
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Abstract
The present invention relates in one aspect to a semiconductor device (10), comprising a substrate (11), a photonic semiconductor layer (12), a first insulator layer (13) above the photonic semiconductor layer (12), and a lens layer (14) on top of the first insulator layer (13). A method for fabricating the semiconductor device is also disclosed. The method comprises the steps of forming a substrate, forming a photonic semiconductor layer on the substrate, forming a first insulator layer above the photonic semiconductor layer, and forming a lens layer on top of the insulator layer.
Claims13
A semiconductor device, comprising:
- (a) a substrate;
- (b) at least one photonic semiconductor layer;
- (c) at least one first insulator layer above said photonic semiconductor layer;
- (d) at least one lens layer on top of said first insulator layer, characterized in that:
- said lens layer is deposited on said first insulator layer and includes at least one lens portion;
- and
- said first insulator layer includes a cavity beneath said lens portion to suspend said lens portion.
4 more elements
Dependencies are inferred from the claim text.