Light detecting device with oxide semiconductor transitors

A light detecting device, comprising:

• a semiconductor substrate;
• a first photoelectric conversion unit disposed on a light incident side of the semiconductor substrate, wherein the first photoelectric conversion unit includes:
• a first electrode;
• a second electrode;
• and
• a first photoelectric conversion film, wherein the first photoelectric conversion film is disposed between the first and second electrodes;
• a control unit, including:
• a plurality of pixel transistors,
• wherein the plurality of pixel transistors include an amplification transistor that amplifies and outputs charges as a pixel signal, and
• wherein a channel formation region of the amplification transistor is made of an oxide semiconductor layer;
• a drive wiring layer having a plurality of drive wires for driving the plurality of pixel transistors;
• a power supply signal wiring layer having a plurality of power supply wires for applying a power supply voltage to the plurality of pixel transistors and a plurality of signal wires for transmitting pixel signals;
• and
• a gate electrode layer having a plurality of gate electrodes of the plurality of pixel transistors,
• wherein the drive wiring layer, the power supply signal wiring layer, and the gate electrode layer are stacked with the oxide semiconductor layer.