Semiconductor structures having a heterojunction structure with polarized regions and non-polarized regions, and manufacturing methods thereof

Abstract

Provided are a semiconductor structure and manufacturing method thereof, the semiconductor comprising: a base, wherein the base comprises strip trenches arranged parallelly; and a heterojunction structure located on bottom walls and sidewalls of the strip trenches and on the base other than the strip trenches, wherein regions of the heterojunction structure located on the bottom walls and on the base other than the strip trenches are polarized regions, regions of the heterojunction structure on the sidewalls are non-polarized regions, and the polarized regions contain carriers; the heterojunction structure comprises a source region and a drain region respectively located at both ends of each of the strip trenches, and a gate region between the source region and the drain region; and the carriers between the source region and the drain region are confined to flow in each of the polarized regions.

Dependencies are inferred from the claim text.