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US 12,641,354 B2Granted
Photodetection device, electronic apparatus, and photodetection system
AssigneeSony Semiconductor Solutions Corporation
InventorsHideaki Togashi, Tomohiro Ohkubo, Nobuhiro Kawai, Hitoshi Tsuno, Syuto Tamura, Tetsuro Takada
Life of this patent
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Abstract
A photodetection device according to an embodiment includes a plurality of pixels arranged in a matrix, in which each of the pixels includes a semiconductor substrate having a first surface and a second surface opposed to each other, a first photoelectric conversion portion disposed on the second surface side of the semiconductor substrate, an insulating layer covering the first surface of the semiconductor substrate, and at least one pixel transistor located on the first surface side of the semiconductor substrate with the insulating layer interposed therebetween.
Claims19
A photodetection device comprising:
- a plurality of pixels arranged in a matrix, wherein
- each of the pixels includes
- a semiconductor substrate having a first surface and a second surface opposed to each other,
- a first photoelectric conversion portion disposed on the second surface side of the semiconductor substrate,
- an insulating layer covering the first surface of the semiconductor substrate, and at least one pixel transistor located on the first surface side of the semiconductor
- substrate with the insulating layer interposed therebetween, and a semiconductor layer located on the first surface side of the semiconductor
- substrate with the insulating layer interposed therebetween, and
- the at least one pixel transistor is disposed in the semiconductor layer.
5 more elements
A photodetection device comprising:
- a plurality of pixels arranged in a matrix, wherein
- each of the pixels includes
- a semiconductor substrate having a first surface and a second surface opposed to each other,
- a first photoelectric conversion portion disposed on the second surface side of the semiconductor substrate,
- an insulating layer covering the first surface of the semiconductor substrate,
- at least one pixel transistor located on the first surface side of the semiconductor substrate with the insulating layer interposed therebetween,
- a storage electrode that controls outflow of the electric charge generated in the first photoelectric conversion portion from the first photoelectric conversion portion, and
- a shield electrode disposed in at least a part of a periphery of the storage electrode.
5 more elements
A photodetection device comprising:
- a plurality of pixels arranged in a matrix, wherein
- each of the pixels includes
- a semiconductor substrate having a first surface and a second surface opposed to each other,
- a first photoelectric conversion portion disposed on the second surface side of the semiconductor substrate,
- an insulating layer covering the first surface of the semiconductor substrate,
- at least one pixel transistor located on the first surface side of the semiconductor substrate with the insulating layer interposed therebetween, and
- a storage electrode that controls outflow of the electric charge generated in the first photoelectric conversion portion from the first photoelectric conversion portion, and
- the storage electrode includes a first storage electrode disposed at a position facing a first region of the first photoelectric conversion portion and a second storage electrode disposed at a position facing a second region different from the first region.
5 more elements
A photodetection device comprising:
- a plurality of pixels arranged in a matrix, wherein
- each of the pixels includes
- a semiconductor substrate having a first surface and a second surface opposed to each other,
- a first photoelectric conversion portion disposed on the second surface side of the semiconductor substrate,
- an insulating layer covering the first surface of the semiconductor substrate,
- at least one pixel transistor located on the first surface side of the semiconductor substrate with the insulating layer interposed therebetween, and
- a through-electrode penetrating through at least the semiconductor substrate, and
- the first photoelectric conversion portion is electrically connected to the at least one pixel transistor via the through-electrode.
5 more elements
A photodetection device comprising:
- a plurality of pixels arranged in a matrix, wherein
- each of the pixels includes
- a semiconductor substrate having a first surface and a second surface opposed to each other,
- a first photoelectric conversion portion disposed on the second surface side of the semiconductor substrate,
- an insulating layer covering the first surface of the semiconductor substrate,
- at least one pixel transistor located on the first surface side of the semiconductor substrate with the insulating layer interposed therebetween, and
- a second photoelectric conversion portion disposed in the semiconductor substrate, and
- the first photoelectric conversion portion and the second photoelectric conversion portion overlap each other in a substrate thickness direction of the semiconductor substrate.
5 more elements
A photodetection device comprising:
- a plurality of pixels arranged in a matrix, wherein
- each of the pixels includes
- a semiconductor substrate having a first surface and a second surface opposed to each other,
- a first photoelectric conversion portion disposed on the second surface side of the semiconductor substrate,
- an insulating layer covering the first surface of the semiconductor substrate,
- at least one pixel transistor located on the first surface side of the semiconductor substrate with the insulating layer interposed therebetween,
- a second photoelectric conversion portion disposed in the semiconductor substrate, and
- a filter that is disposed on a light incident surface side of the second photoelectric conversion portion and through which at least one of infrared light and near-infrared light is transmitted.
5 more elements
A photodetection system comprising:
- a photodetection device comprising:
- a plurality of pixels arranged in a matrix, wherein
- each of the pixels includes
- a semiconductor substrate having a first surface and a second surface opposed to each other,
- a first photoelectric conversion portion disposed on the second surface side of the semiconductor substrate,
- an insulating layer covering the first surface of the semiconductor substrate, and
- at least one pixel transistor located on the first surface side of the semiconductor substrate with the insulating layer interposed therebetween;
- a light emitting device that outputs light having a predetermined wavelength;
- and
- a control unit that synchronously controls the photodetection device and the light emitting device.
7 more elements
Dependencies are inferred from the claim text.