Wafer edge profile control using connected edge ring hardware

A processing chamber, comprising:

• a substrate support member configured to support a substrate, the substrate support member having a cathode configured to receive power from a DC power supply;
• and
• a process kit supported by the substrate support member, the process kit comprising:
• an edge ring configured to circumscribe a substrate in a semiconductor processing chamber;
• a sliding ring positioned beneath the edge ring, the sliding ring having a top surface configured to contact a bottom surface of the edge ring;
• an actuating mechanism interfaced with a bottom surface of the sliding ring, the actuating mechanism configured to move the sliding ring such that the edge ring may be moved;
• and
• a power coupling mechanism electromechanically coupled to the sliding ring and configured to electro mechanically couple to the cathode providing DC power.

A method of processing a substrate, comprising:

• positioning the substrate on a substrate support member disposed in a substrate processing chamber;
• forming a plasma above the substrate;
• adjusting a height of a component of an edge ring by actuating a sliding ring interfaced with the component to change a direction of ions at an edge of the substrate;
• and
• providing DC power to the edge ring through the sliding ring, wherein the sliding ring is electro mechanically coupled to a cathode in the substrate support member.