Bit counting circuits and memory devices including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsMakoto Hirano, Jongmin Kim
Life of this patent
Estimating the term…
Loading patent…
AssigneeSamsung Electronics Co., Ltd.
InventorsMakoto Hirano, Jongmin Kim
Estimating the term…
A nonvolatile memory device includes a control logic configured to generate a clock signal and a page buffer selection signal including information about a ratio of a number of page buffers on which a fail bit counting operation is performed to a total number of the plurality of page buffers, a fail bit counting circuit configured to select one or more page buffers from among the plurality of page buffers, repeat the fail bit counting operation on the selected one or more page buffers, and output a value of a number of fail bits with respect to the page buffers on which the fail bit counting operation is performed, and a predictor configured to generate a prediction value with respect to a total number of fail bits with respect to the plurality of page buffers.
A nonvolatile memory device comprising:
A nonvolatile memory device comprising:
An operating method of a nonvolatile memory device including a plurality of page buffers, the operating method comprising:
Dependencies are inferred from the claim text.