Program verify compensation by sensing time modulation in a memory device with a defective deck
AssigneeMicron Technology, Inc.
InventorsYu-Chung Lien, Zhenming Zhou
Life of this patent
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Abstract
A request to perform a program operation to program a set of memory cells on a memory device comprising a sense amplifier circuit is received. A defect indicator associated with the set of memory cells is determined to satisfy a defect condition. A modified sensing time period, exceeding a default sensing time period, is determined based on the defect indicator. The program operation is performed using the modified sensing time period during a program verify phase of the program operation.
Claims20
A system comprising:
- a memory device comprising a sense amplifier circuit;
- and
- a processing device, operatively coupled to the memory device, to perform operations comprising:
- receiving a request to perform a program operation to program a page of the memory device;
- maintaining a data structure comprising a plurality of records, wherein each record of the plurality of records comprises a block identifier of a corresponding block, a corresponding defect indicator indicating whether the corresponding block is a partially functional block having at least one defective deck, and a corresponding sensing time period;
- responsive to determining that a defect indicator associated with a block comprising the page satisfies a defect condition, determining, using the data structure, a modified sensing time period for the page based on the corresponding sensing time period in the data structure, wherein the modified sensing time period exceeds a default sensing time period;
- and
- performing the program operation using the modified sensing time period by the sense amplifier circuit during a program verify phase.
A method comprising:
- receiving a request to perform a program operation to program a page of a memory device comprising a sense amplifier circuit;
- maintaining a data structure comprising a plurality of records, wherein each record of the plurality of records comprises a block identifier of a corresponding block, a corresponding defect indicator indicating whether the corresponding block is a partially functional block having at least one defective deck, and a corresponding sensing time period;
- responsive to determining that a defect indicator associated with a block comprising the page satisfies a defect condition, determining, using the data structure, a modified sensing time period for the page based on the corresponding sensing time period in the data structure, wherein the modified sensing time period exceeds a default sensing time period;
- and
- performing the program operation using the modified sensing time period by the sense amplifier circuit during a program verify phase.
A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:
- maintaining a data structure comprising a plurality of records, wherein each record of the plurality of records comprises a block identifier of a corresponding block, a corresponding defect indicator indicating whether the corresponding block is a partially functional block having at least one defective deck, and a corresponding sensing time period;
- initiating a program operation to program a page of a memory device;
- responsive to determining that a defect indicator associated with a block comprising the page satisfies a defect condition, identifying, using the data structure, a modified sensing time period based on the corresponding sensing time period in the data structure, wherein the modified sensing time period exceeds a default sensing time period;
- and
- causing the modified sensing time period to be applied during a program verify phase of the program operation.
Dependencies are inferred from the claim text.