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US 12,640,197 B2Granted
Determination of a bias voltage by applying a series of increasing currents to bit line of memory cell in a neural network
AssigneeSilicon Storage Technology, Inc.
InventorHieu Van Tran
Life of this patent
Estimating the term…
Abstract
A first example comprises programming a memory cell to store a value; applying a series of currents of increasing size to a bit line of the memory cell; and measuring a voltage of a control gate terminal of the memory cell to determine a bias. A second example comprises programming a memory cell to store a value; applying a predetermined current to a bit line of the memory cell; and measuring a voltage of a control gate terminal of the memory cell to determine a bias.
Claims7
A method comprising:
- programming a memory cell to store a value;
- applying a series of currents of increasing size to a bit line of the memory cell;
- and
- when a voltage of the bit line exceeds a reference voltage, measuring a voltage of a control gate terminal of the memory cell to determine a bias.
1 more element
A system comprising:
- a circuit to program a memory cell to store a value;
- and
- a circuit to apply a series of currents of increasing size to a bit line of the memory cell and to measure a voltage of a control gate terminal of the memory cell to determine a bias when a voltage of the bit line exceeds a reference voltage.
Dependencies are inferred from the claim text.