System and method for improving efficiency of multi-storage-row compute-in-memory
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsXiaoyu Sun, Brian Crafton, Murat Kerem Akarvardar
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsXiaoyu Sun, Brian Crafton, Murat Kerem Akarvardar
Estimating the term…
A memory circuit includes an array, a first buffer, a second buffer, a fetch circuit, and a controller. The fetch circuit can be configured to fetch a first subset of a first data elements from the first buffer and temporarily store the first subset of the first data elements, during a first cycle to write the first subset of the first data elements to a first subset of a plurality of processing elements (PEs) arranged along a first one of rows in the array. The controller can be configured to control the fetch circuit to selectively limit fetching a second subset of the first data elements from the first buffer, during a second subsequent cycle to write a second subset of the first data elements to a second subset of the PEs arranged along a second one of the rows.
A memory circuit, comprising:
A memory circuit, comprising:
A method for operating a compute-in-memory (CIM) circuit, comprising:
Dependencies are inferred from the claim text.