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AssigneeSamsung Electronics Co., Ltd.
InventorsShinhaeng Kang, Seongil O
Estimating the term…
A semiconductor memory device includes a plurality of memory bank groups configured to be accessed in parallel; an internal memory bus configured to receive external data from outside the plurality of memory bank groups; and a first computation circuit configured to receive internal data from a first memory bank group of the plurality of memory bank groups during each first period of a plurality of first periods, receive the external data through the internal memory bus during each second period of a plurality of second periods, the second period being shorter than the first period, and perform a processing in memory (PIM) arithmetic operation on the internal data and the external data during each second period.
A semiconductor memory device comprising:
A method of operating a computation circuit comprising buffers in a semiconductor memory device, the semiconductor memory device comprising a first memory bank, a second memory bank separate from the first memory bank, and the computation circuit, the method comprising:
Dependencies are inferred from the claim text.