EUV mirror with improved optical stability
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYung-Yao Lee, Yi-Nong Chung
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYung-Yao Lee, Yi-Nong Chung
Estimating the term…
A heated extreme ultraviolet (EUV) mirror, method of making same, and a projection optics box (POB) of an EUV lithography scanner employing same, are disclosed. The POB includes EUV mirrors disposed inside a vacuum chamber and arranged respective to project an image of a reflective EUV photolithography mask disposed on a reticle stage onto a wafer disposed on a wafer stage. Each EUV mirror of the plurality of EUV mirrors includes a mirror support and an EUV-reflective multilayer disposed on a front side of the mirror support. The plurality of EUV mirrors includes at least one heated EUV mirror that further includes a resistive heater disposed in the mirror support of the heated EUV mirror. In integrated circuit manufacturing, the exposure of a photoresist layer on a semiconductor wafer to EUV light using the POB includes controlling mirror temperature using a heater embedded in the EUV mirror.
A projection optics box (POB) of an extreme ultraviolet (EUV) lithography scanner, the POB comprising:
An extreme ultraviolet (EUV) mirror system comprising:
A method of manufacturing an integrated circuit, the method comprising:
Dependencies are inferred from the claim text.