Light detection device
AssigneeSony Group Corporation
InventorsYusuke Mada, Atsushi Ito, Masaki Orihashi
Life of this patent
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Abstract
Provided is a light detection device including a Peltier element that includes a P-type semiconductor and an N-type semiconductor disposed between a first substrate and a second substrate, and a light receiving part that receives light from the object having been subjected to temperature modulation by the Peltier element, in which the first substrate is provided on the object side, the second substrate is provided on the light receiving part side, and at least parts of the first substrate and the second substrate transmits light from the object. The present technology can be applied to, for example, a detection device that detects a predetermined material by receiving and analyzing light from an object to be measured.
Claims16
A light detection device, comprising:
- a Peltier element comprising:
- a P-type semiconductor;
- an N-type semiconductor;
- a first substrate;
- and
- a second substrate, wherein
- each of the P-type semiconductor and the N-type semiconductor is between the first substrate and the second substrate, and
- the Peltier element is configured to subject an object to temperature modulation;
- and
- a light receiving part configured to receive first light from the object subjected to the temperature modulation by the Peltier element, wherein
- the first substrate is on an object side of the light detection device,
- the second substrate is on a light receiving part side of the light detection device,
- a region of the second substrate is within an observation visual field of the light receiving part,
- the region of the second substrate is a hole, and
- each of a first part of the first substrate and a second part of the second substrate is configured to transmit the first light from the object towards the light receiving part.
Dependencies are inferred from the claim text.