Apparatus for continuously growing ingot

An apparatus for continuously growing an ingot, comprising:

• a growth furnace in which a main crucible, wherein silicon in a molten state is accommodated, is provided to form the ingot;
• a material supply part disposed outside the growth furnace and comprising a bucket in a form of a container that is opened upward to accommodate a silicon material in a solid state and configured to supply the silicon material before the silicon material is melted;
• a preliminary melting part disposed between the material supply part and the main crucible, the preliminary melting part comprising:
• a preliminary crucible disposed inside a heating space, the preliminary crucible being configured to melt the silicon material in the solid state, which is supplied from the material supply part, while being heated within the heating space;
• and
• a preliminary crucible heater comprising an induction coil wound around a first axis extending in a transverse direction so as to surround the heating space and configured to heat the preliminary crucible;
• and
• a shield formed to surround an outer peripheral surface of the induction coil,
• wherein a winding direction of the induction coil corresponds to the first axis and is inclined with respect to a second axis extending in a horizontal direction of the preliminary melting part,
• wherein the preliminary crucible is movable between a first position for accommodating the silicon material in a solid state and a second position for supplying the silicon in a molten state to the main crucible, and
• wherein, in the first position, an inclination of the preliminary crucible is parallel to the winding direction of the induction coil, and in the second position, the inclination of the preliminary crucible intersects the winding direction of the induction coil;
• a blocking plate provided between the material supply part and the preliminary melting part, and configured to prevent a heat loss by being openable,
• wherein, while the blocking plate is open, the silicon material in the solid state moved from the material supply part in a direction of the preliminary crucible and is introduced into one side of the heating space such that the silicon material in the solid state is supplied to the preliminary crucible, and after the silicon material in the solid state accommodated in the preliminary crucible is melted, the silicon in the molten state moves toward the main crucible and is discharged to the other side of the heating space, thereby being directly supplied to the main crucible.