Three-dimensional silicon scaffold for tissue engineering
AssigneeNielson Scientific, LLC
InventorGregory Nolan Nielson
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Abstract
Three-dimensional scaffolds to facilitate engineered tissue growth are described herein. An exemplary scaffold comprises a first capillary element, a second capillary element, and a connective element that spans a distance between the first capillary element and the second capillary element, connecting the capillary elements. Tissues can be grown within the scaffold such that the tissues have highly vascularized structures with many capillaries running throughout. The scaffolds can be fabricated by selective electrochemical etching of a semiconductor element. The electrochemical etching can be controlled by way of a laser configured to stimulate multiphoton absorption in the semiconductor.
Claims17
A method for manufacturing a scaffold for supporting tissue growth, the method comprising:
- controlling electrochemical etching of a semiconductor by way of a laser to manufacture the scaffold, wherein the laser emits a beam of light having an energy below a bandgap energy of the semiconductor, wherein controlling the electrochemical etching of the semiconductor comprises focusing the beam in the semiconductor to cause multi-photon absorption (MPA) within the semiconductor, wherein controlling the electrochemical etching of the semiconductor further comprises variably controlling a voltage source to establish an electric field within the semiconductor, wherein a focal spot of the beam and the electric field within the semiconductor are controlled based on a predicted migration of charge carriers within the semiconductor to form a feature having a desired characteristic etched in the semiconductor, wherein the scaffold comprises:
- a first capillary element;
- a second capillary element;
- and
- a connective element that spans a distance between the first capillary element and the second capillary element.
A method for growing tissues comprising:
- controlling electrochemical etching of a semiconductor by way of a laser to manufacture a scaffold, wherein the laser emits a beam of light having an energy below a bandgap energy of the semiconductor, wherein controlling the electrochemical etching of the semiconductor comprises focusing the beam in the semiconductor to cause multi-photon absorption (MPA) within the semiconductor, wherein controlling the electrochemical etching of the semiconductor further comprises variably controlling a voltage source to establish an electric field within the semiconductor, wherein a focal spot of the beam and the electric field within the semiconductor are controlled based on a predicted migration of charge carriers within the semiconductor to to form a feature having a desired characteristic etched in the semiconductor, wherein the scaffold comprises:
- a first capillary element;
- a second capillary element;
- and
- a connective element that spans a distance between the first capillary element and the second capillary element;
- and
- introducing a cellular sample into the first capillary element.
Dependencies are inferred from the claim text.