Rinsing solution, method of treating substrate, and method of manufacturing semiconductor device
AssigneeTokyo Ohka Kogyo Co., Ltd.
InventorsYukihisa Wada, Natsumi Okawa, Satoshi Fujimura, Takayuki Haraguchi, Kazumasa Wakiya
Life of this patent
Estimating the term…
Abstract
A rinsing solution for rinsing a substrate with a protrusion portion, including an organic solvent (S1) that contains no hydroxyl group or fluorine atom and that has a dynamic viscosity of equal to or smaller than 1.05×106 m2/s. A method of treating a substrate with a protrusion portion, including a step (A) of bringing the rinsing solution into contact with a surface of the substrate with the protrusion portion, the protrusion portion being formed on the surface; and a step (B) of removing the rinsing solution from the surface on which the protrusion portion is formed.
Claims8
A rinsing solution for rinsing a substrate with a protrusion portion, consisting of:
- 2,2-dimethoxypropane and 1,1,1-trimethoxypropane.
A rinsing solution for rinsing a substrate with a protrusion portion, consisting of:
- 1,1,1-trimethoxypropane and 2-propanol.
Dependencies are inferred from the claim text.