Gas treatment system, semiconductor process system including the same, and gas treatment method using the same

A gas treatment system, comprising:

• a first scrubber configured to treat a gas exhausted from a process chamber;
• a catalytic reactor connected to the first scrubber, and configured to treat a gas passing through the first scrubber;
• and
• a second scrubber connected to the catalytic reactor, and configured to treat a gas passing through the catalytic reactor,
• wherein the catalytic reactor comprises a fluidized bed reactor, a catalyst flow member configured to provide a catalytic flow space, a catalyst supply line configured to supply a first catalyst to the catalyst flow member, a catalyst exhaust line configured to exhaust the first catalyst from the catalytic flow space, a catalyst mixing apparatus configured to receive the exhausted first catalyst and mix the exhausted first catalyst with a second catalyst to generate a mixed catalyst, and a catalyst supply apparatus configured to receive the mixed catalyst and supply the mixed catalyst to the catalyst supply line.