US 12,635,572 B2Granted

Package structure and method for manufacturing the same

AssigneeAdvanced Semiconductor Engineering, Inc.

InventorsChien-Hua Chen, Cheng-Yuan Kung

Life of this patent

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Abstract

A semiconductor package structure includes a plurality of transducer devices, a cap structure, at least one redistribution layer (RDL) and a protection material. The transducer devices are disposed side by side. Each of the transducer devices has at least one transducing region, and includes a die body and at least one transducing element. The die body has a first surface and a second surface opposite to the first surface. The transducing region is disposed adjacent to the first surface of the die body. The transducing element is disposed adjacent to the first surface of the die body and within the transducing region. The cap structure covers the transducing region of the transducer device to form an enclosed space. The redistribution layer (RDL) electrically connects the transducer devices. The protection material covers the transducer devices.

Claims4

Dependent claims

A package structure, comprising:

a plurality of filters each having a die body;
a protection material covering the plurality of filters;
a first insulating layer directly contacting both the die body of a first one of the plurality of filters and the protection material;
a first redistribution layer (RDL) connecting the first one of the plurality of filters with a second one of the plurality of filters;
and
a circuit structure carrying and electrically connecting the plurality of filters,
wherein the first one of the plurality of filters includes a conductive element, wherein the circuit structure includes the first redistribution layer (RDL) and a second insulating layer defining an opening exposing a portion of the first redistribution layer (RDL), wherein the conductive element is electrically connected to the first redistribution layer (RDL) through a pad in the opening of the second insulating layer,
wherein a portion of the protection material is disposed in the opening of the second insulating layer.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/987,693Filed 15 Nov 2022 · continuation
Priority: 26 Jul 2018
Published: US 2023/0075336 A19 Mar 2023
Granted: 19 May 2026
Term ends: Not estimatedThe source records don’t support an estimate.

Classification33 codes

H03H 9/1071
For surface acoustic wave [SAW] devices: the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical…
H10W 90/00
Package configurations
H03H 3/02
For the manufacture of electromechanical resonators or networks: for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 3/08
For the manufacture of electromechanical resonators or networks: for the manufacture of resonators or networks using surface acoustic waves

Family

Application62/703,768Us provisional application · filed 26 Jul 2018
Application16/518,837Parent of this continuation · filed 22 Jul 2019
US 2023/0075336 A1Pre-grant publication · published 9 Mar 2023
US 11,502,067 B2Parent of this continuation
US 2020/0035654 A1Published application
US 12,635,572 B2This patent

From the US filing history. Foreign family members aren’t listed.