Ag alloy bonding wire for semiconductor device
AssigneesNippon Micrometal Corporation, Nippon Steel Chemical & Material Co., Ltd.
InventorsNoritoshi Araki, Takumi Ookabe, Daizo Oda, Tomohiro Uno, Tetsuya Oyamada
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Abstract
There is provided a novel Ag alloy bonding wire for semiconductor devices which provides an excellent bonded ball shape during ball bonding, which is required for high-density packaging. The Ag alloy bonding wire for semiconductor devices is made of an Ag alloy that contains one or more elements selected from the group consisting of Te, Bi and Sb and that satisfies at least one of the following conditions (1) to (3): (1) a concentration of Te is 5 to 500 at. ppm; (2) a concentration of Bi is 5 to 500 at. ppm; and (3) a concentration of Sb is 5 to 1,500 at. ppm.
Claims20
An Ag alloy bonding wire for semiconductor devices comprising:
- one or more first elements selected from the group consisting of Te, Bi and Sb and satisfying at least one of the following conditions (1) to (3):
- (1) a concentration of Te is 5 to 500 at. ppm;
- (2) a concentration of Bi is 5 to 500 at. ppm;
- and
- (3) a concentration of Sb is 5 to 1,500 at. ppm;
- and
- one or more second elements selected from the group consisting of Pd, Pt, In and Ga, the one or more second elements including In, wherein a total concentration of the one or more second elements is 3 at. % or less, and a concentration of In is 0.03 at. % or more,
- wherein a total concentration of other elements calculated by the following Formula (1) is 0 at. % or more and 0.5 at. % or less,
- 100−(x1+x2+xAg) in at. % Formula (1):
- where x1 is a total concentration of the one or more first elements in at. %, x2 is a total concentration of the one or more second elements in at. %, and xAg is a concentration of Ag in at. %.
An Ag alloy bonding wire for semiconductor devices comprising:
- one or more first elements selected from the group consisting of Te, Bi and Sb and satisfying at least one of the following conditions (1) to (3):
- (1) a concentration of Te is 5 to 500 at. ppm;
- (2) a concentration of Bi is 5 to 500 at. ppm;
- and
- (3) a concentration of Sb is 5 to 1,500 at. ppm;
- and
- one or more second elements selected from the group consisting of Pd, Pt, In and Ga, the one or more second elements including Ga, wherein a total concentration of the one or more second elements is 3 at. % or less,
- wherein a total concentration of other elements calculated by the following Formula (1) is 0 at. % or more and 0.5 at. % or less,
- 100−(x1+x2+xAg) in at. % Formula (1):
- where x1 is a total concentration of the one or more first elements in at. %, x2 is a total concentration of the one or more second elements in at. %, and xAg is a concentration of Ag in at. %.
Dependencies are inferred from the claim text.