Semiconductor device with enhanced bonding, method of manufacturing same, and power conversion device
AssigneeMitsubishi Electric Corporation
InventorsYasunari Hino, Yasuo Tanaka, Shinnosuke Soda
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Abstract
Provided are a semiconductor device with a bonding strength ensured between an electrode of a semiconductor element and a terminal, and a power conversion device including the semiconductor device. A semiconductor device includes: a semiconductor element having an electrode; a substrate; a terminal; and a bonding material. The terminal has a through hole and has a step portion in the inside of the through hole. The bonding material covers the step portion in the inside of the through hole and is in contact with the electrode of the semiconductor element.
Claims19
A semiconductor device comprising:
- a semiconductor element having an electrode;
- a substrate having the semiconductor element mounted thereon;
- a terminal disposed to be opposed to the electrode of the semiconductor element,
- the terminal including a through hole having a step portion;
- and
- a bonding material covering the step portion inside the through hole and being in contact with the electrode of the semiconductor element.
A method of manufacturing a semiconductor device, the method comprising:
- preparing a substrate, a semiconductor element having an electrode, and a terminal having a through hole with a step portion;
- mounting the semiconductor element on the substrate with a first bonding material interposed;
- heating the first bonding material to bond the semiconductor element to the substrate with the first bonding material interposed;
- mounting the terminal on the electrode of the semiconductor element with a second bonding material interposed;
- and
- heating the second bonding material to bond the terminal to the electrode with the second bonding material interposed,
- wherein in the bonding of the terminal, the second bonding material covers the step portion of the through hole and is in contact with the electrode of the semiconductor element.
A method of manufacturing a semiconductor device, the method comprising:
- preparing a substrate, a semiconductor element having an electrode, and a terminal having a through hole with a step portion;
- mounting the semiconductor element on the substrate with a first bonding material interposed;
- mounting the terminal on the electrode of the semiconductor element with a second bonding material interposed;
- and
- heating the first bonding material and the second bonding material to bond the semiconductor element to the substrate with the first bonding material interposed and bond the terminal to the electrode with the second bonding material interposed,
- wherein in the bonding, the second bonding material covers the step portion of the through hole and is in contact with the electrode of the semiconductor element.
A method of manufacturing a semiconductor device, the method comprising:
- preparing a semiconductor element having an electrode, and a terminal having a through hole with a step portion;
- mounting the terminal on the electrode such that the through hole overlaps the electrode of the semiconductor element;
- and
- supplying a bonding material having flowability to inside of the through hole to bond the terminal to the electrode with the bonding material interposed,
- wherein in the bonding of the terminal, the bonding material covers the step portion of the through hole and is in contact with the electrode of the semiconductor element.
Dependencies are inferred from the claim text.