Replacement buried power rail
AssigneeInternational Business Machines Corporation
InventorsRuilong Xie, Stuart Sieg, Somnath Ghosh, Kisik Choi, Kevin Shawn Petrarca
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Abstract
Embodiments disclosed herein describe a semiconductor structure. The semiconductor structure may include a device region with a first source/drain (S/D) and a second S/D. The semiconductor structure may also include a buried power rail (BPR) under the device region. A critical dimension of the BPR may be larger than a distance between the first S/D and the second S/D. The semiconductor structure may also include a via-contact-to-buried power rail (VBPR) between the BPR and the S/D.
Claims13
A semiconductor structure, comprising:
- a device region comprising a first source/drain (S/D) and a second S/D;
- a buried power rail (BPR) under the device region, wherein a critical dimension of the BPR is larger than a distance between the first S/D and the second S/D;
- a via-contact-to-buried power rail (VBPR) between the first S/D and the second S/D directly contacting the BPR, the first S/D, and a back-end-of-line (BEOL) layer.
A semiconductor structure, comprising:
- a back side power delivery network (BSPDN);
- a buried power rail (BPR) coupled to the BSPDN;
- a via-contact-to-buried power rail (VBPR) between a first S/D and a second S/D and coupled to the BPR, wherein the BPR wraps around a bottom of the VBPR and a critical dimension of the BPR is larger than a distance between the first S/D and the second S/D;
- wherein the first S/D is coupled to a middle of the VBPR;
- and
- a back-end-of-line layer directly contacting a top of the VBPR.
Dependencies are inferred from the claim text.