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US 12,635,488 B2Granted
Merged trenches surrounded by wider trench for isolating semiconductor devices
AssigneeTexas Instruments Incorporated
InventorsHao Yang, Asad Haider, Guruvayurappan Mathur, Abbas Ali, Alexei Sadovnikov, Umamaheswari Aghroam
Life of this patent
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Abstract
Active semiconductor devices in an integrated circuit are provided lateral electrical isolation by surrounding narrow deep trench isolation regions that are merged at shared portions of the narrow deep trench isolation regions. A wide deep trench isolation region laterally surrounds the merged narrow deep trench isolation regions.
Claims20
An integrated circuit (IC) comprising:
- a first active semiconductor device;
- a first lateral isolation trench region laterally surrounding the first active semiconductor device, the first lateral isolation trench region having a first trench depth and a first trench width;
- a second active semiconductor device;
- a second lateral isolation trench region laterally surrounding the second active semiconductor device, the second lateral isolation trench region having a second trench depth and a second trench width, a portion of the second lateral isolation trench region being shared with a portion of the first lateral isolation trench region;
- and
- a third lateral isolation trench region laterally surrounding the first and second lateral isolation trench regions, the third lateral isolation trench region laterally spaced apart from the first and second lateral isolation trench regions, the third lateral isolation trench region having a third trench depth greater than the first and second trench depths, and the third lateral isolation trench region having a third trench width greater than the first and second trench widths.
3 more elements
An integrated circuit (IC) comprising:
- a substrate of a first conductivity type;
- epitaxial semiconductor material over the substrate, the epitaxial semiconductor material having a surface region of the first conductivity type;
- in the substrate or the epitaxial semiconductor material, a buried layer of a second conductivity type opposite the first conductivity type;
- first and second active semiconductor devices in the surface region;
- a first lateral isolation trench having a first portion between the first and second active semiconductor devices and a second portion not between the first and second active semiconductor devices at a first lateral distance from the first active semiconductor device, the first lateral isolation trench having a first width and a first depth, the first depth greater than a depth of the buried layer;
- a second lateral isolation trench laterally surrounding the first lateral isolation trench and the first and second active semiconductor devices and at a second lateral distance from the first active semiconductor device, the second lateral distance greater than the first lateral distance, the second lateral isolation trench having a second width greater than the first width and a second depth greater than the first depth;
- insulating material lining side and bottom surfaces of the first lateral isolation trench and side surfaces of the second lateral isolation trench;
- and
- conductive material filling the first and second lateral isolation trenches, the conductive material of the second lateral isolation trench electrically coupled to the substrate.
6 more elements
Dependencies are inferred from the claim text.