Method of forming a pattern of semiconductor device of a semiconductor device on a semiconductor substrate by using an extreme ultraviolet mask

A method of forming a pattern of a semiconductor device, the method comprising:

• preparing a semiconductor substrate on which a cell region and an outer region surrounding the cell region are provided;
• applying a photoresist on the semiconductor substrate;
• irradiating extreme ultraviolet (EUV) light reflected from an EUV mask, onto the photoresist;
• forming a photoresist pattern in the cell region and the outer region by developing the photoresist;
• and
• etching the semiconductor substrate, using the photoresist pattern as an etch mask,
• wherein the EUV mask comprises:
• a plurality of main patterns arranged in a first zone, of the EUV mask, corresponding to the cell region, in a first direction and in a second direction substantially perpendicular to the first direction;
• and
• a first lane and a second lane in a second zone, of the EUV mask, corresponding to the outer region, wherein the first lane and the second lane surround the plurality of main patterns, wherein the first lane extends in the first direction and has a line-and-space pattern, and the second lane extends in the second direction and has a protruding pattern.