Semiconductor process device and method of monitoring semiconductor process

A semiconductor process device comprising:

• a housing including a chamber where a substrate is processed;
• a viewport in a side wall of the housing;
• an adapter including a plurality of light receiving units configured to receive reflected light beams generated from plasma generated inside the chamber from a plurality of target positions on a surface of a structure provided on an upper surface of the substrate;
• a plurality of polarization beam splitters configured to separate each of the reflected light beams received from the plurality of light receiving units into P-polarized light and S-polarized light;
• a spectroscope configured to analyze spectra from a plurality of P-polarized light beams and a plurality of S-polarized light beams separated by the plurality of polarization beam splitters;
• and
• a control unit configured to monitor a thickness of the structure at each of the plurality of target positions based on luminous intensity over time at one or more wavelengths of each of the plurality of P-polarized light beams and the plurality of S-polarized light beams, based on results of analyzing the spectra.

A semiconductor process device, comprising:

• a chamber where a structure on an upper surface of a substrate is formed by performing plasma processing;
• and
• a control unit configured to:
• determine a target position on a surface of the structure deposited on the upper surface of the substrate;
• receive reflected light in which light generated by plasma generated in the chamber is reflected from the target position;
• detect a time point at which a peak or a valley occurs in luminous intensity over time at one or more wavelengths of each of P-polarized light and S-polarized light separated from the received reflected light;
• and
• determine a thickness of the structure at the detected time point by applying a target incident angle, a phase of reflectance, and a refractive index of the surface of the structure to a reflectance model according to a direction of the polarization.