Semiconductor processing tool and methods of operation

A method, comprising:

• performing a chemical-mechanical polishing/planarization (CMP) operation to planarize one or more metallization layers of a semiconductor wafer in a first chamber;
• transferring, via an opening in a side of a hermetically sealed enclosure of a second chamber, the semiconductor wafer into the second chamber and onto a stage in the hermetically sealed enclosure;
• removing, via a first set of nozzles of the second chamber, oxygen from the second chamber;
• performing, after removing oxygen from the second chamber and using a first cleaning mechanism, a first cleaning operation on the semiconductor wafer in the second chamber;
• transferring the semiconductor wafer to a third chamber;
• removing, via a second set of nozzles of the third chamber, oxygen from the third chamber;
• and
• performing, after removing oxygen from the third chamber and using a second cleaning mechanism different from the first cleaning mechanism, a second cleaning operation on the semiconductor wafer in the third chamber.

A chamber, comprising:

• an enclosure comprising an opening, at a side of the enclosure, to receive a semiconductor wafer;
• a wafer stage, in the enclosure, configured to support the semiconductor wafer;
• one or more nozzles comprising:
• a first nozzle and a second nozzle, of the enclosure, configured to provide inert gas at different directions onto the semiconductor wafer positioned on the wafer stage, or
• a third nozzle, of a cleaning head of the chamber, configured to provide the inert gas onto the semiconductor wafer positioned on the wafer stage;
• and
• a controller configured to cause the one or more nozzles to be provided into the chamber to reduce oxygen concentration to be at or below a threshold oxygen concentration.