Thin-film transistor, display apparatus including the same, and method of preparing the thin-film transistor

Abstract

A thin-film transistor including: a gate electrode; a gate insulating layer that is in contact with the gate electrode; a semiconductor layer insulated from the gate electrode by the gate insulating layer; and a source electrode and a drain electrode that are in contact with the semiconductor layer, wherein the semiconductor layer includes a perovskite compound represented by Formula 1: [A]2[B][X]6:Z  Formula 1 wherein, in Formula 1, A includes a monovalent organic-cation, a monovalent inorganic-cation, or a combination thereof, B includes Sn4+, X includes a monovalent anion, and Z includes a metal cation or a metalloid cation.

Dependencies are inferred from the claim text.