Micro-display unit and display panel

A display panel, comprising:

• a micro-display unit;
• wherein the micro-display unit comprises a first epitaxial structure, a second epitaxial structure, and a bonding layer, wherein the first epitaxial structure and the second epitaxial structure are stacked along a thickness direction of the micro-display unit, and the bonding layer is located between the first epitaxial structure and the second epitaxial structure;
• the first epitaxial structure and the second epitaxial structure each comprise an epitaxial layer, and the epitaxial layer comprises a first semiconductor layer, a light-emitting layer, and a second semiconductor layer that are stacked;
• and in each of the first epitaxial structure and the second epitaxial structure, the first semiconductor layer is located on a side of the second semiconductor layer facing the bonding layer;
• the micro-display unit further comprises a first conductive contact portion, the first conductive contact portion is located on a side of the first epitaxial structure facing the bonding layer, and the second epitaxial structure is provided with a first via hole at a position corresponding to the first conductive contact portion;
• the micro-display unit further comprises a first electrode, a connection electrode, and a second electrode, the first electrode passes through the first via hole and is electrically connected to the first conductive contact portion so that the first electrode is electrically connected to the first semiconductor layer of the first epitaxial structure, and the second electrode is electrically connected to the second semiconductor layer of the second epitaxial structure;
• and
• the second epitaxial structure is further provided with a second via hole, the second via hole penetrates the second epitaxial structure and extends to the second semiconductor layer of the first epitaxial structure, the connection electrode passes through the second via hole and is electrically connected to the second semiconductor layer of the first epitaxial structure, and the connection electrode is further electrically connected to the first semiconductor layer of the second epitaxial structure.