Method of producing a direct band gap in indirect band gap materials and light emitting or detecting devices fabricated therefrom

Abstract

A method for creating direct band gap material from indirect band gap material, the resultant direct band gap material, and corresponding optical devices are described. The method employs atomic layer doping (ALDo) to create closely spaced δ-doped layers, alternating between n-type and p-type dopants, to modify the band structure of the indirect band gap material. The spacing between adjacent δ-doped layers is between 1 and 100 Å. The dopants may, for example, include phosphorus, boron, and/or aluminum, while the indirect band gap material may, for example, include silicon and/or germanium. The method and material may alternatively employ a single dopant for all closely spaced δ-doped layers. This single dopant may, for example, be erbium. Optical devices, including emitters and photodetectors, may be formed of the created direct band gap material. Both vertical and lateral devices may be formed.

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