Light emitting device, display apparatus, and manufacturing method thereof

A display apparatus comprising:

• a light emitting device comprising:
• a first nitride semiconductor layer doped with an n-type dopant and having a first lattice constant;
• an active layer provided on the first nitride semiconductor layer and having a second lattice constant greater than the first lattice constant, the active layer comprising a nitride semiconductor material comprising indium;
• a stress relaxation layer interposed between the first nitride semiconductor layer and the active layer and having a third lattice constant between the first lattice constant and the second lattice constant, the stress relaxation layer comprising a nitride semiconductor material comprising indium;
• and
• a second nitride semiconductor layer provided on the active layer and doped with a p-type dopant,
• wherein the active layer comprises:
• an upper active region provided on an upper surface of the stress relaxation layer, and
• a side active region comprising a side surface directly contacting a side surface of the stress relaxation layer and a side surface of the first nitride semiconductor layer,
• wherein the light emitting device has a width in a first direction that is less than a length thereof in a second direction perpendicular to the first direction, and
• wherein the side surface of the stress relaxation layer, the side surface of the first nitride semiconductor layer and the side surface of the side active region are aligned in the second direction.