Method for making image sensor devices including a superlattice

A method for making an image sensor device comprising:

• forming a pixel region within a semiconductor substrate comprising a first dopant having a first conductivity type;
• forming a first pinning layer on a surface of the substrate and comprising a second dopant having a second conductivity type different than the first conductivity type;
• forming a second pinning layer in the semiconductor substrate adjacent at least one side of the pixel region and comprising a superlattice and the second dopant, the superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base semiconductor portions;
• and
• forming an isolation region in the semiconductor substrate adjacent the second pinning layer.

A method for making an image sensor device comprising:

• forming a pixel region within a semiconductor substrate comprising a first dopant having a first conductivity type;
• forming a first pinning layer on a surface of the substrate and comprising a second dopant having a second conductivity type different than the first conductivity type;
• and
• forming a second pinning layer in the semiconductor substrate adjacent at least one side of the pixel region and comprising a superlattice and the second dopant, the superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base silicon portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base semiconductor portions.