Nitride semiconductor device

A nitride semiconductor device comprising:

• a base;
• a semiconductor stacked structure above the base, the semiconductor stacked structure including a plurality of nitride semiconductor layers;
• a first active area on a top surface side of the semiconductor stacked structure, the first active area being surrounded by an isolation area;
• and
• the following electrodes above the first active area:
• (i) a source electrode;
• (ii) a first gate electrode and a second gate electrode, one on either side of and spaced from the source electrode in a first direction in plan view;
• and (iii) at least one drain electrode located in a direction opposite the source electrode relative to the first gate electrode or the second gate electrode, wherein
• the source electrode, the first gate electrode, the second gate electrode, and the at least one drain electrode each include a finger-shaped portion extending in a second direction perpendicular to the first direction in the plan view,
• a first dielectric film is disposed above the source electrode,
• the first gate electrode and the second gate electrode are electrically connected by a gate electrode joiner disposed above the first dielectric film, and
• the first gate electrode, the second gate electrode, and the gate electrode joiner include the same metal layer.